Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures
نویسندگان
چکیده
Related Articles Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors J. Appl. Phys. 112, 054513 (2012) Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface Appl. Phys. Lett. 101, 111604 (2012) Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs J. Appl. Phys. 112, 054510 (2012) Enhancement of electrical conductivity of thick silver electrode using a tailored amorphous alloy Appl. Phys. Lett. 101, 084104 (2012) Nanoscale contacts between semiconducting nanowires and metallic graphenes Appl. Phys. Lett. 101, 063122 (2012)
منابع مشابه
Effects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C
Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...
متن کاملLow interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3~Gd2O3!, all evaporated by an electron beam method. The SiO2 and Ga2O3~Gd2O3! films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs~100!. Among these heterostructures, the Ga2O3~Gd2O3!–GaAs shows a...
متن کاملSelf-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Several layers of ErAs islands separated by GaAs can be stacked on top of each other to form a superlattice. X-ray diffraction shows superlattice fringes from such samples. Pump...
متن کاملFormation of misfit dislocations in strained-layer GaAs/In
The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...
متن کاملSuppression of defect propagation in semiconductors by pseudomorphic layers
The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer ca...
متن کامل